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 CYStech Electronics Corp.
PNP Epitaxial Planar Transistor
Spec. No. : C656E3 Issued Date : 2004.06.03 Revised Date : Page No. : 1/4
BTA1210E3
Description
The BTA1210E3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application.
Features
* High BVCEO * High DC current gain * High current capability * Monolithic construction with built-in base-emitter shunt resistors
Equivalent Circuit
BTA1210E3 C B
Outline
TO-220AB
E BBase CCollector EEmitter
BCE
BTA1210E3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Note : Single Pulse Pw350s, Duty2%.
Spec. No. : C656E3 Issued Date : 2004.06.03 Revised Date : Page No. : 2/4
Symbol VCBO VCEO VEBO IC ICP Pd(TA=25) Pd(TC=25) RJA RJC Tj Tstg
Limits -120 -120 -5 -10 -15 (Note ) 2 65 62.5 1.92 150 -55~+150
Unit V V V A A W W C/W C/W C C
Characteristics (Ta=25C)
Symbol BVCEO BVCBO BVEBO ICBO ICEO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. -120 -120 -5 1 100 Typ. Max. -200 -200 -2 -2 -4 -4.5 -2.8 12 300 Unit V V V A A mA V V V V K pF Test Conditions IC=-1mA, IB=0 IC=-100A, IE=0 IE=-1mA, IC=0 VCB=-120V, IE=0 VCE=-120V, IB=0 VEB=-5V, IC=0 IC=-4A, IB=-16mA IC=-8A, IB=-80mA IC=-8A, IB=-80mA VCE=-4V, IC=-4A VCE=-4V, IC=-4A VCE=-4V, IC=-8A VCB=-10V, IE=0A, f=1MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
BTA1210E3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
10000
VCE=3V
Spec. No. : C656E3 Issued Date : 2004.06.03 Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current 10
VCESAT@IC=250IB
Current Gain---HFE
1000
100
Saturation Voltage---(V) 1 10 100 1000 Collector Current---IC(mA) 10000
1
10
1
0.1 100 1000 Collector Current---IC(mA) 10000
On voltage vs Collector Current
10 Power Dissipation---P D(W)
VBEON@VCE=3V
Power Derating Curve
2.5 2 1.5 1 0.5 0
On Voltage---(V)
1
0.1 1 10 100 1000 10000 Collector Current---IC(mA)
0
50 100 150 Ambient Temperature---TA()
200
Power Derating Curve
70 Power Dissipation---PD(W) 60 50 40 30 20 10 0 0 50 100 150 200 Case Temperature---TC()
BTA1210E3
CYStek Product Specification
CYStech Electronics Corp.
TO-220AB Dimension
Spec. No. : C656E3 Issued Date : 2004.06.03 Revised Date : Page No. : 4/4
A D
B E C
Marking:
A1210
H I G 4 P M 3 2 1 N
Style: Pin 1.Base 2.Collector 3.Emitter 4.Collector
K
O
3-Lead TO-220AB Plastic Package CYStek Package Code: E3 *: Typical
DIM A B C D E G H
Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398
Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25
DIM I K M N O P
Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248
Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1210E3
CYStek Product Specification


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